Influence of bimodal distribution and excited state emission on photoluminescence spectra of InAs self-assembled quantum dots
Identifieur interne : 000A52 ( Main/Repository ); précédent : 000A51; suivant : 000A53Influence of bimodal distribution and excited state emission on photoluminescence spectra of InAs self-assembled quantum dots
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Abstract
Optical properties of self-assembled quantum dots (SAQDs) samples were investigated through photoluminescence (PL) with variation of temperature and excitation density. Two types of InAs SAQDs were studied: dots grown directly on GaAs, and dots grown inside an InGaAs quantum well, heterostructure known as dot-in-a-well (DWELL). The QDs structures were produced through conventional growth (with several deposition rates) as well as through pulsed growth mode, which consists in deposition cycles with growth interruption intervals. In the samples of QDs grown on GaAs, two PL peaks were identified and their behavior as a function of temperature can be explained by taking into account a bimodal distribution of dot sizes. For the DWELL sample only one PL peak was identified, which was assigned to the emission of the ground state of QDs belonging to a larger Gaussian distribution of dot sizes. SAQDs samples showed an anomalous behavior of the peak energy, integrated intensity and linewidth (FWHM) of the PL signal, as a function of temperature. To explain the observed results, a model was proposed that takes into account the size distribution of dots and the excited state emission of the family of larger dots. The QDs can be distributed in a bimodal size distribution, and the emission from the excited state can be observed, or not, depending on the growth conditions and on the potential profile of the dot. Such aspects can be combined to explain several peculiarities of the PL spectra observed in this and other published papers on SAQDs optical properties.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Influence of bimodal distribution and excited state emission on photoluminescence spectra of InAs self-assembled quantum dots</title><author><name sortKey="Franchello, Flavio" uniqKey="Franchello F">Flavio Franchello</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departamento de Fisica, Universidade Estadual de Londrina, CP 6001</s1><s2>CEP 86051-990 Londrina, Paraná</s2><s3>BRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Brésil</country><wicri:noRegion>CEP 86051-990 Londrina, Paraná</wicri:noRegion></affiliation></author><author><name sortKey="De Souza, Leonardo D" uniqKey="De Souza L">Leonardo D. De Souza</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departamento de Fisica, Universidade Estadual de Londrina, CP 6001</s1><s2>CEP 86051-990 Londrina, Paraná</s2><s3>BRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Brésil</country><wicri:noRegion>CEP 86051-990 Londrina, Paraná</wicri:noRegion></affiliation></author><author><name sortKey="Laureto, Edson" uniqKey="Laureto E">Edson Laureto</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departamento de Fisica, Universidade Estadual de Londrina, CP 6001</s1><s2>CEP 86051-990 Londrina, Paraná</s2><s3>BRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Brésil</country><wicri:noRegion>CEP 86051-990 Londrina, Paraná</wicri:noRegion></affiliation></author><author><name sortKey="Quivy, Alain A" uniqKey="Quivy A">Alain A. Quivy</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratório de Novos Materiais Semicondutores, Instituto de Física, Universidade de São Paulo, CP 66318</s1><s2>CEP05315-970 São Paulo</s2><s3>BRA</s3><sZ>4 aut.</sZ></inist:fA14><country>Brésil</country><wicri:noRegion>CEP05315-970 São Paulo</wicri:noRegion></affiliation></author><author><name sortKey="Dias, Ivan F L" uniqKey="Dias I">Ivan F. L. Dias</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departamento de Fisica, Universidade Estadual de Londrina, CP 6001</s1><s2>CEP 86051-990 Londrina, Paraná</s2><s3>BRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Brésil</country><wicri:noRegion>CEP 86051-990 Londrina, Paraná</wicri:noRegion></affiliation></author><author><name sortKey="Duarte, Jose L" uniqKey="Duarte J">José L. Duarte</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departamento de Fisica, Universidade Estadual de Londrina, CP 6001</s1><s2>CEP 86051-990 Londrina, Paraná</s2><s3>BRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Brésil</country><wicri:noRegion>CEP 86051-990 Londrina, Paraná</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0236162</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0236162 INIST</idno><idno type="RBID">Pascal:13-0236162</idno><idno type="wicri:Area/Main/Corpus">000A74</idno><idno type="wicri:Area/Main/Repository">000A52</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-2313</idno><title level="j" type="abbreviated">J. lumin.</title><title level="j" type="main">Journal of luminescence</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Deposition rate</term><term>Excited states</term><term>Gallium arsenides</term><term>Gaussian distribution</term><term>Ground states</term><term>Growth mechanism</term><term>Heterostructures</term><term>Indium arsenides</term><term>Integrated intensity</term><term>Line widths</term><term>Optical properties</term><term>Photoluminescence</term><term>Quantum dots</term><term>Quantum wells</term><term>Self-assembled layers</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etat excité</term><term>Photoluminescence</term><term>Propriété optique</term><term>Vitesse dépôt</term><term>Mécanisme croissance</term><term>Etat fondamental</term><term>Arséniure d'indium</term><term>Couche autoassemblée</term><term>Point quantique</term><term>Arséniure de gallium</term><term>Puits quantique</term><term>Hétérostructure</term><term>Loi Gauss</term><term>Intensité intégrée</term><term>Largeur raie</term><term>InAs</term><term>Substrat GaAs</term><term>InGaAs</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Optical properties of self-assembled quantum dots (SAQDs) samples were investigated through photoluminescence (PL) with variation of temperature and excitation density. Two types of InAs SAQDs were studied: dots grown directly on GaAs, and dots grown inside an InGaAs quantum well, heterostructure known as dot-in-a-well (DWELL). The QDs structures were produced through conventional growth (with several deposition rates) as well as through pulsed growth mode, which consists in deposition cycles with growth interruption intervals. In the samples of QDs grown on GaAs, two PL peaks were identified and their behavior as a function of temperature can be explained by taking into account a bimodal distribution of dot sizes. For the DWELL sample only one PL peak was identified, which was assigned to the emission of the ground state of QDs belonging to a larger Gaussian distribution of dot sizes. SAQDs samples showed an anomalous behavior of the peak energy, integrated intensity and linewidth (FWHM) of the PL signal, as a function of temperature. To explain the observed results, a model was proposed that takes into account the size distribution of dots and the excited state emission of the family of larger dots. The QDs can be distributed in a bimodal size distribution, and the emission from the excited state can be observed, or not, depending on the growth conditions and on the potential profile of the dot. Such aspects can be combined to explain several peculiarities of the PL spectra observed in this and other published papers on SAQDs optical properties.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-2313</s0></fA01><fA02 i1="01"><s0>JLUMA8</s0></fA02><fA03 i2="1"><s0>J. lumin.</s0></fA03><fA05><s2>137</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Influence of bimodal distribution and excited state emission on photoluminescence spectra of InAs self-assembled quantum dots</s1></fA08><fA11 i1="01" i2="1"><s1>FRANCHELLO (Flavio)</s1></fA11><fA11 i1="02" i2="1"><s1>DE SOUZA (Leonardo D.)</s1></fA11><fA11 i1="03" i2="1"><s1>LAURETO (Edson)</s1></fA11><fA11 i1="04" i2="1"><s1>QUIVY (Alain A.)</s1></fA11><fA11 i1="05" i2="1"><s1>DIAS (Ivan F. L.)</s1></fA11><fA11 i1="06" i2="1"><s1>DUARTE (José L.)</s1></fA11><fA14 i1="01"><s1>Departamento de Fisica, Universidade Estadual de Londrina, CP 6001</s1><s2>CEP 86051-990 Londrina, Paraná</s2><s3>BRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Laboratório de Novos Materiais Semicondutores, Instituto de Física, Universidade de São Paulo, CP 66318</s1><s2>CEP05315-970 São Paulo</s2><s3>BRA</s3><sZ>4 aut.</sZ></fA14><fA20><s1>22-27</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>14666</s2><s5>354000173271240040</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>22 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0236162</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of luminescence</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Optical properties of self-assembled quantum dots (SAQDs) samples were investigated through photoluminescence (PL) with variation of temperature and excitation density. Two types of InAs SAQDs were studied: dots grown directly on GaAs, and dots grown inside an InGaAs quantum well, heterostructure known as dot-in-a-well (DWELL). The QDs structures were produced through conventional growth (with several deposition rates) as well as through pulsed growth mode, which consists in deposition cycles with growth interruption intervals. In the samples of QDs grown on GaAs, two PL peaks were identified and their behavior as a function of temperature can be explained by taking into account a bimodal distribution of dot sizes. For the DWELL sample only one PL peak was identified, which was assigned to the emission of the ground state of QDs belonging to a larger Gaussian distribution of dot sizes. SAQDs samples showed an anomalous behavior of the peak energy, integrated intensity and linewidth (FWHM) of the PL signal, as a function of temperature. To explain the observed results, a model was proposed that takes into account the size distribution of dots and the excited state emission of the family of larger dots. The QDs can be distributed in a bimodal size distribution, and the emission from the excited state can be observed, or not, depending on the growth conditions and on the potential profile of the dot. 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